IPD60R950C6ATMA1
Power MOSFET, N Channel, 650 V, 5.7 A, 0.68 ohm, TO-252 (DPAK), Surface Mount
Click image to enlarge
Manufacturer:Infineon
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: IPD60R950C6ATMA1
Secondary Manufacturer Part#: IPD60R950C6ATMA1
-
RoHS 10 Compliant -
Tariff Charges
The IPD60R750E6 is a 600V CoolMOS™ E6 N-channel Power MOSFET offers easy control of switching behaviour. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ E6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
- Extremely low losses due to very low figure of merit (RDS (ON) x Qg and EOSS)
- Very high commutation ruggedness
- Easy to use
- Better light load efficiency
- Outstanding reliability with proven CoolMOSâ„¢ quality combined with high body diode ruggedness
- Better performance in comparison to previous CoolMOSâ„¢ generations
- More efficient, more compact, lighter and cooler
- Improved power density
- Improved reliability
- General purpose part can be used in both soft and hard switching topologies
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 4.4 | ||
| 950 | ||
| 650 | ||
| 3.5 | ||
| 3 | ||
| 150 °C | ||
| 37 | ||
| TO-252 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: