IPD320N20N3GATMA1
Power MOSFET, N Channel, 200 V, 34 A, 0.027 ohm, TO-252 (DPAK), Surface Mount
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Manufacturer:Infineon
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: IPD320N20N3GATMA1
Secondary Manufacturer Part#: IPD320N20N3GATMA1
- RoHS 10 Compliant
- Tariff Charges
The IPD320N20N3 G is a 200V N-channel Power MOSFET ideally suited for high-frequency switching, achieving excellent performance in applications such as synchronous rectification for AC-DC SMPS and motor control. The OptiMOS™ MOSFET is optimized for hard commutation ruggedness, achieving low Qrr and lower peak reverse recovery charges. It is performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
- Highest efficiency
- Highest power density
- Lowest board space consumption
- Minimal device paralleling required
- System cost improvement
- Environmentally-friendly
- Easy to design in
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 34 A | ||
| 32 mOhm | ||
| 200 V | ||
| 4 V | ||
| 3 | ||
| 175 °C | ||
| 136 W | ||
| OptiMOS 3 Series | ||
| TO-252 (DPAK) | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |