IPD110N12N3GATMA1
Power MOSFET, N Channel, 120 V, 75 A, 0.0092 ohm, TO-252 (DPAK), Surface Mount
Click image to enlarge
Manufacturer:Infineon
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: IPD110N12N3GATMA1
Secondary Manufacturer Part#: IPD110N12N3GATMA1
-
RoHS 10 Compliant -
Tariff Charges
The IPD110N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON)Â product (FOM)
- Halogen-free, Green device
- Qualified according to JEDEC for target application
- MSL1 rated 2
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 75 | ||
| 11 | ||
| 120 | ||
| 4 | ||
| 3 | ||
| 175 °C | ||
| 136 | ||
| TO-252 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Ships
in 1 bus. day