IPD053N08N3GATMA1
Power MOSFET, N Channel, 80 V, 90 A, 0.0053 ohm, TO-252 (DPAK), Surface Mount
- RoHS 10 Compliant
- Tariff Charges
The IPD053N08N3 G is a N-channel OptiMOS™ 3 Power Transistor with superior thermal resistance, excellent gate charge x R DS(ON) product (FOM) and superior thermal resistance. Optimized technology for DC/DC converters. Ideal for high-frequency switching and synchronous rectification.
- Dual sided cooling
- Very low on resistance
- 100% Avalanche tested
- Low parasitic inductance
- Halogen-free
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 90 | ||
| 5.3 | ||
| 80 | ||
| 3.5 | ||
| 3 | ||
| 175 °C | ||
| 150 | ||
| TO-252 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |