IPC302N12N3X1SA1
Trans MOSFET N-CH 120V DIE Wafer
- RoHS 10 Compliant
- Tariff Charges
N-channel enhancement mode. AQL 0.65 for visual inspection according to failure catalogue. Electrostatic Discharge Sensitive Device according to MIL-STD 883C. Die bond: soldered or glued. Backside metallization: NiV system. Frontside metallization: AlCu system. Passivation: nitride (only on edge structure).
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 100 | ||
| 120 | ||
| 4 | ||
| DIE | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |