IPB64N25S320ATMA1
Power MOSFET, N Channel, 250 V, 64 A, 20 Milliohms, TO-263 (D2PAK), 3 Pins, Surface Mount
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Manufacturer:Infineon
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: IPB64N25S320ATMA1
Secondary Manufacturer Part#: IPB64N25S320ATMA1
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RoHS 10 Compliant -
Tariff Charges
IPB64N25S320ATMA1 is a OptiMOS®-T power-transistor. Potential application includes hybrid inverter, DC/DC, piezo injection.
- N-channel - enhancement mode, AEC qualified, robust packages with superior quality and reliability
- 100% Avalanche tested, optimized total gate charge enables smaller driver output stages
- Drain-source breakdown voltage is 250V min (
Technical Attributes
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| Description | Value | |
|---|---|---|
| N Channel | ||
| 64 A | ||
| 20 mOhm | ||
| 250 V | ||
| 4 V | ||
| 3 | ||
| 175 °C | ||
| 300 W | ||
| OptiMOS T | ||
| AEC-Q101 | ||
| TO-263 (D2PAK) | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: