IPB200N25N3GATMA1
Power MOSFET, N Channel, 250 V, 64 A, 0.0175 ohm, TO-263 (D2PAK), Surface Mount
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Manufacturer:Infineon
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: IPB200N25N3GATMA1
Secondary Manufacturer Part#: IPB200N25N3GATMA1
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RoHS 10 Compliant -
Tariff Charges
The IPB200N25N3 G is a N-channel Power MOSFET produce based on OptiMOS™ leading benchmark technology. It is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS) and inverters.
- Industry's lowest RDS (ON)
- Lowest Qg and Qgd
- World's lowest FOM, MSL 1 rated
- Highest efficiency
- Highest Power density
- Minimal device paralleling required
- Environmentally friendly
- Easy-to-design-in products
- Ideal for high-frequency switching and synchronous rectification
- Qualified according to JEDEC for target application
- Halogen-free, Green device
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 64 A | ||
| 20 mOhm | ||
| 250 V | ||
| 4 V | ||
| 3 | ||
| 175 °C | ||
| 300 W | ||
| OptiMOS Series | ||
| TO-263 (D2PAK) | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
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