IPB117N20NFDATMA1
Power MOSFET, N Channel, 200 V, 84 A, 0.0103 ohm, TO-263 (D2PAK), Surface Mount
- RoHS 10 Compliant
- Tariff Charges
New OptiMOS™ Fast Diode (FD), Infineon’s latest generation of power MOSFETs in 200V and 250V, is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as Telecom, Industrial Power Supplies, Class D Audio Amplifiers, Motor Control and DC-AC inverter.
- 200V OptiMOSâ„¢ FD power-transistor
- N-channel, normal level
- Fast diode(FD) with reduced Qrr
- Optimized for hard commutation ruggedness
- Very low on-resistance RDS(on)
- 175°C operating temperature
- Qualified according to JEDEC for target application
- Halogen-free according to IEC61249-2-21
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 84 | ||
| 11.7 | ||
| 200 | ||
| 4 | ||
| 3 | ||
| 175 °C | ||
| 300 | ||
| TO-263 (D2PAK) | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |