IPB036N12N3GATMA1
Power MOSFET, N Channel, 120 V, 180 A, 0.0029 ohm, TO-263 (D2PAK), Surface Mount
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Manufacturer:Infineon
Product Category:
Discretes, FETs, Single MOSFETs
Avnet Manufacturer Part #: IPB036N12N3GATMA1
Secondary Manufacturer Part#: IPB036N12N3GATMA1
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RoHS 10 Compliant -
Tariff Charges
The IPB036N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated 2
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Qualified according to JEDE for target applications
- Halogen-free, Green device
- Ideal for high-frequency switching and synchronous rectification
- Normal level
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 180 | ||
| 3.6 mOhm | ||
| 120 | ||
| 4 | ||
| 7 | ||
| 175 °C | ||
| 300 | ||
| TO-263 (D2PAK) | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
Factory Lead Time: