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IMBG120R350M1HXTMA1

Name: IMBG120R350M1HXTMA1
Brand: Infineon
SKU: IMBG120R350M1HXTMA1
Availability: InStock

Transistor Silicon Carbide MOSFET N-CH 1200V 4.7A 7-Pin TO-263 T/R

Manufacturer:Infineon

Product Category: Discretes, FETs, Silicon Carbide (SiC) MOSFETs & Modules

Avnet Manufacturer Part #: IMBG120R350M1HXTMA1

Secondary Manufacturer Part#: 92AH5313

Find Similar Parts

	Description	Value
	Channel Type	N Channel
	Continuous Drain Current Id	4.7
	Drain Source On State Resistance	468
	Drain Source Voltage Vds	1.2
	Gate Source Threshold Voltage Max	5.7
	Mosfet Module Configuration	Single
	No. of Pins	7
	Operating Temperature Max	175 °C
	Power Dissipation	65
	Transistor Case Style	TO-263 (D2PAK)

In Stock : 0

Additional inventory

Factory Lead Time: 109 Weeks

Price for: Each

Quantity:

Min:1 Mult:1

USD $:

$6.65

10+

$4.43

25+

$4.0

50+

$3.58

100+

$3.17

250+

$3.03

500+

$2.89

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