IKW30N60H3FKSA1
IGBT, 30 A, 2.4 V, 187 W, 600 V, TO-247, 3 Pins
- RoHS 10 Compliant
- Tariff Charges
The IKW30N60H3 is a 600V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
- Low switching losses for high efficiency
- Fast switching behaviour with low EMI emissions
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short circuit capability
- Excellent performance
- Low switching and conduction losses
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 600 | ||
| 60 | ||
| 3 | ||
| 175 °C |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8536507000 |
| Schedule B: | 8536507000 |