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IGW15N120H3FKSA1

IGBT, 30 A, 2.05 V, 217 W, 1.2 kV, TO-247, 3 Pins

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IGW15N120H3FKSA1
  • IGW15N120H3FKSA1
Manufacturer:Infineon
Product Category: Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: IGW15N120H3FKSA1
Secondary Manufacturer Part#: IGW15N120H3FKSA1
  • Legend Information Icon RoHS 10 Compliant
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Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.

  • Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
  • Low switching losses for high efficiency
  • Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
  • Fast switching behavior with low EMI emissions
  • Optimized diode for target applications, meaning further improvement in switching losses
  • Low gate resistor selection possible (down to 5O) whilst maintaining excellent switching behaviour
  • Short circuit capability
  • Offering T j(max) of 175°C
  • Packaged with and without freewheeling diode for increased design freedom

    • Technical Attributes

    Find Similar Parts

    		 Description Value
    		1200
    		30
    		3
    		175 °C

    ECCN / UNSPSC / COO

    Description Value
    Country of Origin: RECOVERY FEE
    ECCN: EAR99
    HTSN: 8541290095
    Schedule B: 8541290080
    In Stock :  150.0
    Ships in 1 bus. day
    Additional inventory
    Factory Lead Time: 133 Weeks
    Price for: Each
    Quantity:
    Min:30  Mult:1  
    USD $:
    30+
    $1.6464
    40+
    $1.638
    70+
    $1.6296
    150+
    $1.25932
    300+
    $1.2528