IGT60R190D1SATMA1

IGT60R190D1SATMA1 is a 600V CoolGaN™ enhancement-mode power transistor. The IGT60R190D1 enables more compact topologies and increased efficiency at higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. It is designed for optimal power dissipation required in modern data centres, server, telecom, renewables and numerous other applications. Applications include Industrial, telecom, datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC).

• Enhancement mode transistor – normally OFF switch, ultra-fast switching
• No reverse-recovery charge, capable of reverse conduction
• Low gate charge, low output charge, superior commutation ruggedness
• Qualified for industrial applications according to JEDEC standards (JESD47 and JESD22)
• Improves system efficiency, improves power density
• Enables higher operating frequency, system cost reduction savings, reduces EMI
• Drain source voltage (continuous) is 600V at VGS = 0V, Tj = 25°C
• Drain-source on-state resistance is 0.19ohm at IG = 9.6mA, ID = 5A, Tj = 25°C
• PG-HSOF-8-3 package
• Operating temperature range from -55 to 150°C