IGO60R070D1AUMA1

Infineon launches a GaN enhancement mode high electron mobility transistor (e-mode HEMT) portfolio with industry-leading field performance, enabling rugged and reliable systems at an attractive overall system cost. CoolGaN™ transistors are built with the most reliable GaN technology and are tailor-made to deliver the market’s highest efficiency and density levels in switched mode power supplies. The application-based qualification approach extends beyond that of other GaN products in the market.