IGO60R070D1AUMA1
Transistor MOSFET N-CH 600V 31A 20-Pin DSO T/R
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Manufacturer:Infineon
Product Category:
Discretes, FETs, Gallium Nitride FETs (GaN)
Avnet Manufacturer Part #: IGO60R070D1AUMA1
Secondary Manufacturer Part#: IGO60R070D1AUMA1
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RoHS 10 Compliant -
Tariff Charges
Infineon launches a GaN enhancement mode high electron mobility transistor (e-mode HEMT) portfolio with industry-leading field performance, enabling rugged and reliable systems at an attractive overall system cost. CoolGaN™ transistors are built with the most reliable GaN technology and are tailor-made to deliver the market’s highest efficiency and density levels in switched mode power supplies. The application-based qualification approach extends beyond that of other GaN products in the market.
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 31 | ||
| 70 | ||
| 600 | ||
| 20 | ||
| DSO | ||
| Surface Mount | ||
| 5.8 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8542390050 |
| Schedule B: | 8542390060 |
Factory Lead Time: