IGC033S10S1XTMA1
Gallium Nitride (GaN) Transistor, 100 V, 76 A, 3300 µohm, 11 nC, TSON, 6 Pins, Surface Mount
Manufacturer:Infineon
Product Category:
Discretes, FETs, Gallium Nitride FETs (GaN)
Avnet Manufacturer Part #: IGC033S10S1XTMA1
Secondary Manufacturer Part#: IGC033S10S1XTMA1
- RoHS 10 Compliant
- Tariff Charges
IGC033S10S1XTMA1 is a CoolGaN™ G3 100V, 2.4mohm normally-off e-mode power transistor, enabling high power density designs. It is the ideal choice for reliable performance in demanding high-voltage and high-current applications. Suitable for telecom & datacentre 48V IBC, sync rectification for AC-DC and DC-DC converters, robotics and drones, battery powered tools, 48V servo drive, e-Mobility, UAVs, Class D audio, solar & energy storage systems, point of load converters applications.
- Ultra fast switching and high efficiency
- No reverse recovery charge, space saving and highly robust package
- Ultra low gate charge and output charge
- Exposed die for top-side thermal excellence
- Best-in-class power density, highest efficiency, excellent reliability, lowering BOM cost
- Improved thermal management
- Enabling smaller and lighter designs
- 120V max pulsed drain-source voltage at VGS=0V, 1h total time
- 76A max continuous drain current at Vgs=5V, T =25°C
- 6 pin TSON package, junction temperature range from -40 to 150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 76 A | ||
| 3300 uOhm | ||
| 100 V | ||
| 6 | ||
| CoolGaN G3 Series | ||
| TSON | ||
| Surface Mount | ||
| 11 nC |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |