IGC033S101XTMA1
Gallium Nitride (GaN) Transistor, 100 V, 76 A, 3.3 Milliohms, 11 nC, VSON, Surface Mount
Manufacturer:Infineon
Product Category:
Discretes, FETs, Gallium Nitride FETs (GaN)
Avnet Manufacturer Part #: IGC033S101XTMA1
Secondary Manufacturer Part#: IGC033S101XTMA1
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RoHS 10 Compliant -
Tariff Charges
IGC033S101XTMA1 is a CoolGaN™ G3 100V, 2.4mohm normally-off e-mode power transistor, enabling high power density designs. It is the ideal choice for reliable performance in demanding high-voltage and high-current applications. Suitable for telecom & datacentre 48V IBC, sync rectification for AC-DC and DC-DC converters, robotics and drones, battery powered tools, 48V servo drive, e-Mobility, UAVs, Class D audio, solar & energy storage systems, point of load converters applications.
- High switching frequency
- No reverse recovery charge
- Reverse conduction capability
- Low gate charge, low output charge and qualified according to JEDEC
- Best-in-class power density, highest efficiency, excellent reliability, lowering BOM cost
- Improved thermal management
- Enabling smaller and lighter designs
- 120V max pulsed drain-source voltage at VGS=0V, 1h total time
- 76A max continuous drain current at Vgs=5V, T =25°C
- 6 pin VSON package, junction temperature range from -40 to 150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 76 A | ||
| 3.3 mOhm | ||
| 100 V | ||
| 6 | ||
| CoolGaN G3 Series | ||
| VSON | ||
| Surface Mount | ||
| 11 nC |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541290040 |
| Schedule B: | 8541290080 |
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