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IGB30N60TATMA1

Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) TO-263

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IGB30N60TATMA1
  • IGB30N60TATMA1
Manufacturer:Infineon
Product Category: Discretes, IGBT, IGBT Single
Avnet Manufacturer Part #: IGB30N60TATMA1
Secondary Manufacturer Part#: IGB30N60TATMA1
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

  • Lowest V ce(sat) drop for lower conduction losses
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
  • Very soft, fast recovery anti-parallel Emitter Controlled Diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

    • Technical Attributes

    Find Similar Parts

    		 Description Value
    		1.5
    		600
    		45
    		3
    		175 °C
    		187
    		TO-263 (D2PAK)
    		Surface Mount

    ECCN / UNSPSC / COO

    Description Value
    Country of Origin: RECOVERY FEE
    ECCN: EAR99
    HTSN: 8541290040
    Schedule B: 8541290080
    In Stock :  0
    Additional inventory
    Factory Lead Time: 133 Weeks
    Price for: Each
    Quantity:
    Min:1000  Mult:1000  
    USD $:
    1000+
    $0.9172
    2000+
    $0.90347
    4000+
    $0.88968
    8000+
    $0.87593
    16000+
    $0.86214