IDM02G120C5XTMA1

With CoolSiC™ generation 5 Infineon presents a new leading edge technology for SiC Schottky Barrier diodes, delivering market leading efficiency, more system reliability at attractive cost point. Infineon’s thin wafer technology, already introduced with Generation 2, is now combined with a new, merged pn junction bringing improved conduction losses, thermal characteristics and surge capabilities. The result is a series of products delivering improved efficiency and reliability in PFC and Boost stages over all load conditions with respect to all previous CoolSiC™ generations.

• Revolutionary semiconductor material - Silicon Carbide
• No reverse recovery current / No forward recovery
• Temperature independent switching behavior
• Low forward voltage even at high operating temperature
• Tight forward voltage distribution
• Excellent thermal performance
• Extended surge current capability
• Specified dv/dt ruggedness
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant