IDH12G65C6XKSA1
Silicon Carbide Schottky Diode, CoolSiC 6G 650V, Single, 650 V, 27 A, 17.1 nC, TO-220
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RoHS 10 Compliant -
Tariff Charges
IDH12G65C6XKSA1 is a 650V 6th generation CoolSiC™ SiC schottky diode. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF). The CoolSiC™ Schottky diode 650V G6 has been designed to complement our 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range. Potential applications include power factor correction in SMPS, solar inverter and uninterruptible power supply.
- Best in class forward voltage (1.25V)
- Best in class figure of merit (Qc x VF)
- High dv/dt ruggedness (150Vns)
- System efficiency improvement
- System cost and size savings due to the reduced cooling requirements
- Enabling higher frequency and increased power density
- Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22)
- 17.1nC QC (VR = 400V)
- 12A IF (TC = 140°C, D = 1) and 1.25V VF (IF = 10A, Tj = 25°C)
- 2 lead TO220 package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 27 | ||
| TO-220 | ||
| Single | ||
| Through Hole | ||
| 2 | ||
| 175 °C | ||
| 650 | ||
| 17.1 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | EAR99 |
| HTSN: | 8541100080 |
| Schedule B: | 8541100080 |
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