FM25V02A-DG

FM25V02A-DG is a 256Kbit non-volatile memory in a 8 pin DFN-EP package. An F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, the FM25V02A performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non-volatile memories. The FM25V02A is capable of supporting 10^14 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM25V02A ideal for non-volatile memory applications requiring frequent or rapid writes.

• 256Kbit ferroelectric random access memory (logically organized as 32K × 8)
• Advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI)
• Low power consumption of 2.5mA active current at 40MHz, 150µA (typ) standby current
• Low-voltage operation VDD = 2.7V to 3.6V
• Industrial temperature range from –40°C to +85°C