FM25640B-G
Ferroelectric RAM (FRAM), 64 Kbit, 8K x 8bit, SPI, 20 MHz, 4.5 V to 5.5 V Supply, SOIC-8
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RoHS 10 Compliant -
Tariff Charges
FM25640B-G is a 64kb non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead and system level reliability problems caused by serial flash, EEPROM and other non-volatile memories. Unlike serial flash and EEPROM, this memory performs write operations at bus speed. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition this memory offers substantial write endurance compared with other non-volatile memories.
- No write delays are incurred
- Very fast serial peripheral interface
- Direct hardware replacement for serial flash and EEPROM
- Sophisticated write protection scheme
- -40 to 85°C Industrial temperature range
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Serial (SPI) | ||
| 20 MHz | ||
| 8 Bit | ||
| 64 Kb | ||
| SPI | ||
| Matte Tin | ||
| 260 | ||
| 4 mA | ||
| 20 ns | ||
| 64 Kb | ||
| Surface Mount | ||
| MSL 1 - Unlimited | ||
| 8 | ||
| 5 V | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 8Kx8 | ||
| 8SOIC | ||
| 8 | ||
| 4.9 x 3.9 x 1.5 mm | ||
| Industrial | ||
| SOIC | ||
| 5.5 V | ||
| 4.5 V | ||
| FRAM |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.1.B.2 |
| HTSN: | 8542320071 |
| Schedule B: | 8542320070 |
Factory Lead Time: