FM24V02A-GTR

FM24V02A-GTR is a FM24V02A is a 256Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Data is written to the memory array immediately after each byte is successfully transferred to the device. F-RAM also exhibits much lower power during writes than EEPROM because write operations do not require an internally elevated power supply voltage for write circuits. It is ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.

• 256Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8
• NoDelay™ writes, advanced high-reliability ferroelectric process
• Fast two-wire serial interface (I2C), direct hardware replacement for serial EEPROM
• Supports legacy timings for 100kHz and 400kHz
• Low power consumption, 175µA active current at 100kHz, 150µA standby current
• Low-voltage operation: VDD = 2.0V to 3.6V
• Industrial temperature range from –40°C to +85°C
• 8-pin SOIC package