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FM24CL16B-DG

Ferroelectric RAM (FRAM), 16 Kbit, 2K x 8bit, I2C, 1 MHz, 2.7 V to 3.65 V Supply, DFN-8

Manufacturer:Infineon
Product Category: Memory, Ferroelectric RAM (FRAM)
Avnet Manufacturer Part #: FM24CL16B-DG
Secondary Manufacturer Part#: FM24CL16B-DG
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The FM24CL16B is a 16-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM24CL16B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24CL16B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM24CL16B ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.

  • 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8
    • High-endurance 100 trillion (1014) read/writes
    • 151-year data retention (See the Data Retention and Endurance table)
    • NoDelay™ writes
    • Advanced high-reliability ferroelectric process
  • Fast 2-wire Serial interface (I2C)
    • Up to 1-MHz frequency
    • Direct hardware replacement for serial (I2C) EEPROM
    • Supports legacy timings for 100 kHz and 400 kHz
  • Low power consumption
    • 100 µA active current at 100 kHz
    • 3 µA (typ) standby current
  • Voltage operation: VDD = 2.7 V to 3.65 V
  • Industrial temperature: -40 °C to +85 °C
  • Packages
    • 8-pin small outline integrated circuit (SOIC) package
    • 8-pin dual flat no leads (DFN) package
  • Restriction of hazardous substances (RoHS) compliant

Technical Attributes

Find Similar Parts

Description Value
Serial (2-Wire)
1 MHz
8 Bit
16 Kb
I2C
Matte Tin
260
0.3 mA
550 ns
16 Kb
Surface Mount
MSL 1 - Unlimited
8
3, 3.3 V
-40 to 85 °C
85 °C
-40 °C
2Kx8
8TDFN EP
8
4.5 x 4 x 0.75 mm
Industrial
TDFN EP
3.65 V
2.7 V
FRAM

ECCN / UNSPSC / COO

Description Value
Country of Origin: RECOVERY FEE
ECCN: EAR99
HTSN: 8542320071
Schedule B: 8542320070
In Stock :  0
Additional inventory
Factory Lead Time: 140 Weeks
Price for: Each
Quantity:
Min:1620  Mult:1620  
USD $:
1620+
$1.22