FM22LD16-55-BG

FM22LD16-55-BG is a 4-Mbit (256K × 16) F-RAM memory. It is a non-volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. The FM22LD16 operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. The FM22LD16 includes a low voltage monitor that blocks access to the memory array when VDD drops below VDD min. The memory is protected against inadvertent access and data corruption under this condition. The device also features software-controlled write protection.

• 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 16
• Configurable as 512K × 8 using active-low UB and LB, high-endurance 100 trillion (10^14) read/write
• NoDelay™ writes, page mode operation to 25ns cycle time
• Advanced high-reliability ferroelectric process
• SRAM compatible, industry-standard 256K × 16 SRAM pinout
• 55ns access time, 110ns cycle time
• Advanced features, software-programmable block write-protect
• Standby current is 90µA typ at VDD=3.6V, TA=25°C
• 48-ball FBGA package, 2.7V to 3.6V supply voltage
• Industrial operating temperature range from -40°C to +85°C