FM1808B-SG

FM1808B-SG is a non-volatile, 256Kbit (32 K × 8) bytewide F-RAM memory. It reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. The FM1808B operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Minimum read and write cycle times are equal. The F-RAM memory is non-volatile due to its unique ferroelectric memory process. These features make the FM1808B ideal for non-volatile memory applications requiring frequent or rapid writes.

• High-endurance 100 trillion (10^14) read/writes, NoDelay™ writes
• Advanced high-reliability ferroelectric process
• SRAM and EEPROM compatible, 70ns access time, 130ns cycle time
• Industry-standard 32 K × 8 SRAM and EEPROM pinout
• Superior to battery-backed SRAM modules, no battery concerns, monolithic reliability
• True surface mount solution, no rework steps, superior for moisture, shock, and vibration
• Resistant to negative voltage undershoots
• Standby current (CMOS) is 25µA typ at VDD=5.5 V, active-low CE at VIH
• 28-pin SOIC package, 4.5V to 5.5V power supply voltage
• Industrial operating temperature range from -40°C to +85°C