FM16W08-SGTR

FM16W08-SGTR is a FM16W08 8 K × 8 non-volatile wide voltage Bytewide F-RAM memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. Its operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Minimum read and write cycle times are equal. The F-RAM memory is non-volatile due to its unique ferroelectric memory process. This features make the FM16W08 ideal for non-volatile memory applications requiring frequent or rapid writes.

• NoDelayâ„¢ writes, advanced high-reliability ferroelectric process
• SRAM and EEPROM compatible, industry-standard 8 K × 8 SRAM and EEPROM pinout
• 70ns access time, 130ns cycle time, superior to battery-backed SRAM modules
• No battery concerns, monolithic reliability, true surface mount solution, no rework steps
• Superior for moisture, shock, and vibration, resistant to negative voltage undershoots
• Low power consumption, active current 12mA (max), standby current 20µA (typ)
• Wide voltage operation: VDD = 2.7V to 5.5V
• Industrial temperature range from –40°C to +85°C
• 28-pin SOIC package