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FF8MR12W1M1HB70BPSA1

Name: FF8MR12W1M1HB70BPSA1
Brand: Infineon
SKU: FF8MR12W1M1HB70BPSA1
Availability: InStock

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 100 A, 1.2 kV, 8.1 MilliOhms, Module, 18 Pins

Manufacturer:Infineon

Product Category: Discretes, FETs, Silicon Carbide (SiC) MOSFETs & Modules

Avnet Manufacturer Part #: FF8MR12W1M1HB70BPSA1

Secondary Manufacturer Part#: FF8MR12W1M1HB70BPSA1

Find Similar Parts

	Description	Value
	Channel Type	Dual N Channel
	Continuous Drain Current Id	100 A
	Drain Source On State Resistance	8100 uOhm
	Drain Source Voltage Vds	1.2 kV
	Gate Source Threshold Voltage Max	5.15 V
	Mosfet Module Configuration	Half Bridge
	No. of Pins	18
	Operating Temperature Max	150 °C
	RDS(ON) Test Voltage	18 V
	Transistor Case Style	Module

In Stock : 24.0

Ships in 1 bus. day

Additional inventory

Factory Lead Time: 140 Weeks

Price for: Each

Quantity:

Min:24 Mult:1

USD $:

24+

$87.01776

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