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FF4MR12W2M1HB11BPSA1

Name: FF4MR12W2M1HB11BPSA1
Brand: Infineon
SKU: FF4MR12W2M1HB11BPSA1
Availability: InStock

Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 170 A, 1.2 kV, 6 Milliohms, Module, 36 Pins

Manufacturer:Infineon

Product Category: Discretes, FETs, Silicon Carbide (SiC) MOSFETs & Modules

Avnet Manufacturer Part #: FF4MR12W2M1HB11BPSA1

Secondary Manufacturer Part#: FF4MR12W2M1HB11BPSA1

Find Similar Parts

	Description	Value
	Channel Type	Dual N Channel
	Continuous Drain Current Id	170 A
	Drain Source On State Resistance	6 mOhm
	Drain Source Voltage Vds	1.2 kV
	Gate Source Threshold Voltage Max	5.15 V
	Mosfet Module Configuration	Half Bridge
	No. of Pins	36
	Operating Temperature Max	175 °C
	RDS(ON) Test Voltage	18 V
	Transistor Case Style	Module

In Stock : 0

Additional inventory

Factory Lead Time: 70 Weeks

Price for: Each

Quantity:

Min:15 Mult:1

USD $:

15+

$205.62804

30+

$197.61656

60+

$189.60507

120+

$181.59359

240+

$178.25548

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