PDP SEO Portlet

CY7C1565XV18-633BZXC

SRAM Chip Sync Dual 1.8V 72M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray

Manufacturer:Infineon
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: CY7C1565XV18-633BZXC
Secondary Manufacturer Part#: CY7C1565XV18-633BZ
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

The CY7C1565XV18 is 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turnaround” the data bus that exists with common I/O devices. Each port is accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR II+ read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are equipped with DDR interfaces. Each address location is associated with four 36-bit words (CY7C1565XV18) that burst sequentially into or out of the device. Because data is transferred into and out of the device on every rising edge of both input clocks (K and K), memory bandwidth is maximized while simplifying system design by eliminating bus “turnarounds”. Depth expansion is accomplished with port selects, which enables each port to operate independently. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the K or K input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry

  • Separate Independent Read and Write Data Ports
    • Supports concurrent transactions
  • 633 MHz Clock for High Bandwidth
  • Four-word Burst for Reducing Address Bus Frequency
  • Double Data Rate (DDR) Interfaces on both Read and Write Ports (data transferred at 1266 MHz) at 633 MHz
  • Available in 2.5 Clock Cycle Latency
  • Two Input Clocks (K and K) for precise DDR Timing
    • SRAM uses rising edges only
  • Echo Clocks (CQ and CQ) simplify Data Capture in High Speed Systems
  • Data Valid Pin (QVLD) to indicate Valid Data on the Output
  • Single Multiplexed Address Input Bus latches Address Inputs for Read and Write Ports
  • Separate Port selects for Depth Expansion
  • Synchronous Internally Self-timed Writes
  • QDR® II+ Xtreme operates with 2.5 cycle read latency when DOFF is asserted HIGH
  • Operates similar to QDR I Device with one Cycle Read Latency when DOFF is asserted LOW
  • Avail

Technical Attributes

Find Similar Parts

Description Value
19 Bit
Pipelined
633 MHz
QDR
72 Mbit
633 MHz
1660 mA
0.45 ns
72 Mbit
Surface Mount
MSL 3 - 168 hours
165
36 Bit
36 Bit
2
512 kWords
0 to 70 °C
70 °C
0 °C
165FBGA
165
15 x 13 x 0.89 mm
No
Commercial
FBGA
1.9 V
1.7 V
1.8 V
Synchronous
1.8000 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: NO RECOVERY FEE
ECCN: 3A991.B.2.B
HTSN: 8542320041
Schedule B: 8542320040
In Stock :  0
Additional inventory
Factory Lead Time: 777 Weeks
Price for: Each
Quantity:
Min:136  Mult:136  
USD $: