CY7C1565KV18-450BZI
SRAM Chip Sync Dual 1.8V 72M-Bit 2M x 36 0.45ns 165-Pin FBGA Tray
The CY7C1565KV18 is 1.8V Synchronous Pipelined SRAMs, equipped with QDR-II+ architecture. Similar to QDR-II architecture, QDR-II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR-II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turnaround” the data bus that exists with common I/O devices. Each port is accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock. Accesses to the QDR-II+ read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are equipped with DDR interfaces. Each address location is associated with four 36-bit words (CY7C1565KV18) that burst sequentially into or out of the device. Because data is transferred into and out of the device on every rising edge of both input clocks (K and K), memory bandwidth is maximized while simplifying system design by eliminating bus “turnarounds”. Depth expansion is accomplished with port selects, which enables each port to operate independently. All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the K or K input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry.
- Separate Independent Read and Write Data Ports
- Supports concurrent transactions
- 550 MHz Clock for High Bandwidth
- 4-word Burst for Reducing Address Bus Frequency
- Double Data Rate (DDR) Interfaces on both Read and Write Ports (data transferred at 1100 MHz) at 550 MHz
- Available in 2.5 Clock Cycle Latency
- Two Input Clocks (K and K) for precise DDR Timing
- SRAM uses rising edges only
- Echo Clocks (CQ and CQ) simplify Data Capture in High Speed Systems
- Data Valid Pin (QVLD) to indicate Valid Data on the Output
- Single Multiplexed Address Input Bus latches Address Inputs for Read and Write Ports
- Separate Port selects for Depth Expansion
- Synchronous Internally Self-timed Writes
- QDR™-II+ operates with 2.5 cycle read latency when DOFF is asserted HIGH
- Operates similar to QDR-I Device with one Cycle Read Latency when DOFF is asserted LOW
- Available in x
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 19 Bit | ||
| Pipelined | ||
| 450 MHz | ||
| QDR | ||
| 72 Mbit | ||
| Tin-Lead|Tin-Lead-Silver | ||
| 235 | ||
| 450 MHz | ||
| 1100 mA | ||
| 0.45 ns | ||
| 72 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 165 | ||
| 36 Bit | ||
| 36 Bit | ||
| 2 | ||
| 2 MWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 165FBGA | ||
| 165 | ||
| 15 x 13 x 0.89 mm | ||
| No | ||
| Industrial | ||
| FBGA | ||
| 1.9 V | ||
| 1.7 V | ||
| 1.8 V | ||
| Synchronous | ||
| 1.8000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.B |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |