CY7C1321KV18-250BZC

CY7C1321KV18 is 1.8 V Synchronous Pipelined SRAMs equipped with DDR II architecture. The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a two-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. For CY7C1319KV18 and CY7C1321KV18, the burst counter takes in the least two significant bits of the external address and bursts four 18-bit words in the case of CY7C1319KV18, and four 36-bit words in the case of CY7C1321KV18, sequentially into or out of the device.

• 18-Mbit density (1 M × 18, 512 K × 36)
• 333-MHz clock for high bandwidth
• Four-word burst for reducing address bus frequency
• Double data rate (DDR) interfaces (data transferred at 666 MHz) at 333 MHz
• Two input clocks (K and K) for precise DDR timing
  • SRAM uses rising edges only
• Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches
• Echo clocks (CQ and CQ) simplify data capture in high speed systems
• Synchronous internally self-timed writes
• DDR II operates with 1.5 cycle read latency when DOFF is asserted HIGH
• Operates similar to DDR I device with one cycle read latency when DOFF is asserted LOW
• 1.8 V core power supply with HSTL inputs and outputs
• Variable drive HSTL output buffers
• Expanded HSTL output voltage (1.4 V-VDD)
  • Supports both 1.5 V and 1.8 V I/O supply
• Available in 165-ball FBGA package (13 × 15