CY7C1145KV18-400BZXI

The CY7C1145KV18 is 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turnaround” the data bus that exists with common I/O devices. Each port is accessed through a common address bus. Addresses for read and write addresses are latched on alternate rising edges of the input (K) clock.

• Separate independent read and write data ports
  • Supports concurrent transactions
• 450-MHz clock for high bandwidth
• Four-word burst for reducing address bus frequency
• Double data rate (DDR) Interfaces on both read and write ports (data transferred at 900 MHz) at 450 MHz
• Available in 2.0 clock cycle latency
• Two input clocks for precise DDR timing
  • SRAM uses rising edges only
• Echo clocks simplify data capture in high-speed systems
• Data valid pin (QVLD) to indicate valid data on the output
• Single multiplexed address input bus latches address inputs for read and write ports
• Separate port selects for depth expansion
• Synchronous internally self-timed writes
• QDR® II+ operates with 2.0 cycle read latency when ???? is asserted HIGH
• Operates similar to QDR I device with one cycle read latency when ???? is asserted LOW
• Available in × 18,