CY7C1062G30-10BGXI

CY7C1062G30-10BGXI is a 16Mbit (512K words × 32bits), high-performance CMOS fast static RAM with error-correcting code (ECC). It has three chip enables, giving easy memory expansion features. To write to the device, take chip enables (active-low CE1, active-low CE2, and active-low CE3 LOW) and write enable (active-low WE) input LOW. To read from the device, take chip enables (active-low CE1, active-low CE2, and active-low CE3 LOW) and output enable (active-low OE) LOW while forcing the write enable (active-low WE) HIGH. The input and output pins (I/O0 through I/O31) are placed in a high-impedance state when the device is deselected (active-low CE1, active-low CE2, or active-low CE3 HIGH), the outputs are disabled (active-low OE HIGH), the byte selects are disabled (active-low BA-D HIGH), or during a write operation (active-low CE1, active-low CE2 and active-low CE3 LOW and active-low WE LOW).

• Embedded error-correcting code (ECC) for single-bit error correction
• Low active current ICC is 90mA typical
• Low standby current ISB2 is 20mA typical
• 1.0V data retention
• Automatic power-down when deselected
• Transistor-transistor logic (TTL) compatible inputs and outputs
• ERR pin to indicate 1-bit error detection and correction
• High speed, tAA=10ns, 2.2V to 3.6V voltage rating
• 119-ball PBGA package
• Industrial ambient temperature range from -40°C to +85°C