CY7C1051H30-10BV1XE
SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 10ns 48-Pin VFBGA Tray
The CY7C1051H is a high-performance CMOS fast static RAM automotive part with embedded ECC. To write to the device, take Chip Enable (CE\) and Write Enable (WE\) inputs LOW. If Byte LOW Enable (BLE\) is LOW, then data from I/O pins (I/O0-I/O7), is written into the location specified on the address pins (A0-A18). If Byte HIGH Enable (BHE\) is LOW, then data from I/O pins (I/O8-I/O15) is written into the location specified on the address pins (A0-A18). To read from the device, take Chip Enable (CE\) and Output Enable (OE\) LOW while forcing the Write Enable (WE\) HIGH. If Byte LOW Enable (BLE\) is LOW, then data from the memory location specified by the address pins appears on I/O0-I/O7. If Byte HIGH Enable (BHE\) is LOW, then data from memory appears on I/O8 to I/O15.The input/output pins (I/O0-I/O15) are placed in a high-impedance state when the device is deselected (CE\ HIGH), the outputs are disabled (OE\ HIGH), the BHE\ and BLE\ are disabled (BHE\, BLE\ HIGH), or a write operation (CE\ LOW, and WE\ LOW) is in progress. The CY7C1051H is available in a 48-ball VFBGA package.
- Temperature ranges: Automotive-E -40 °C to +125 °C
- High speed: tAA = 10 ns
- Low active and standby currents
- Icc = 90 mA typical
- Isb2 = 20 mA typical
- 1.0 V data retention
- Automatic power-down when deselected
- Transistor-transistor logic (TTL)-compatible inputs and outputs
- Easy memory expansion with CE\ and OE\ features
- Available in Pb-free 48-ball very fine-pitch ball grid array (VFBGA) package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 19 Bit | ||
| 8 Mbit | ||
| Gold over Nickel Palladium | ||
| 260 °C | ||
| 160 mA | ||
| 10 ns | ||
| 8 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 48 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 512 kWords | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 48VFBGA | ||
| 48 | ||
| 6 x 8 x 0.74 mm | ||
| 0 | ||
| Automotive | ||
| VFBGA | ||
| 3.6 V | ||
| 2.2 V | ||
| 3 V | ||
| 3.3000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.B |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |