CY7C1041GN30-10ZSXI

CY7C1041GN30-10ZSXI is high-performance CMOS fast static RAM organized as 256K words by 16-bits. Data writes are performed by asserting the chip enable and write enable inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins. The byte high enable and byte low enable inputs control write operations to the upper and lower bytes of the specified memory location. Active low BHE controls I/O8 through I/O15 and active low BLE controls I/O0= through I/O7. Data reads are performed by asserting the chip enable and output enable inputs LOW and providing the required address on the address lines. Read data is accessible on the I/O lines (I/O0 through I/O15). Byte accesses can be performed by asserting the required byte enable signal (active low BHE or BLE) to read either the upper byte or the lower byte of data from the specified address location.

• High speed tAA = 10ns
• Low active and standby currents active current: ICC = 38mA typ, standby current: ISB2 = 6mA typ
• Voltage range from 2.2V to 3.6V
• Operating ICC is 38mA typ at f = fmax
• 1V data retention
• TTL-compatible inputs and outputs
• Temperature range from -40 to 85°C
• 65nm process technology
• Available in a 44 pin TSOP-II package