CY7C1020CV26-15ZSXET
SRAM Chip Async Single 512K-Bit 32K x 16 15ns 44-Pin TSOP-II T/R
The CY7C1020CV26 is a high performance CMOS static RAM organized as 32,768 words by 16 bits. This device has an automatic power down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking Chip Enable and Write Enable inputs LOW. If Byte Low Enable is LOW, then data from I/O pins, is written into the location specified on the address pins. If Byte High Enable is LOW, then data from I/O pins is written into the location specified on the address pins.
- Temperature range
- Automotive: -40 °C to 125 °C
- High speed
- tAA = 15 ns
- Optimized voltage range: 2.5 V to 2.7 V
- Automatic power down when deselected
- Independent control of upper and lower bits
- CMOS for optimum speed and power
- Package offered: 44-pin TSOP II
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 15 Bit | ||
| 512 Kb | ||
| Gold|Matte Tin | ||
| 260 | ||
| 100 mA | ||
| 15 ns | ||
| 512 Kb | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 44 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 32 kWords | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 44TSOP-II | ||
| 44 | ||
| 18.52 x 10.26 x 1.04 mm | ||
| No | ||
| Automotive | ||
| TSOP-II | ||
| 2.7 V | ||
| 2.5 V | ||
| 2.6 V | ||
| Asynchronous |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.B |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: