CY62177EV30LL-55BAXI
SRAM, Asynchronous SRAM, 32 Mbit, 2M x 16bit, FBGA, 48 Pins, 2.2 V
The CY62177EV30 is a high performance CMOS static RAM organized as 2M words by 16 bits and 4M words by 8 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 99 percent when addresses are not toggling.
- Thin small outline package (TSOP) I configurable as 2 M × 16 or as 4 M × 8 static RAM (SRAM)
- Very high speed
- 55 ns
- Wide voltage range
- 2.2 V to 3.7 V
- Ultra low standby power
- Typical standby current: 3 µA
- Maximum standby current: 25 µA
- Ultra low active power
- Typical active current: 4.5 mA at f = 1 MHz
- Easy memory expansion with CE1/, CE2, and OE/ Features
- Automatic power down when deselected
- Complementary Metal Oxide Semiconductor (CMOS) for optimum speed and power
- Available in Pb-free 48-pin TSOP I package and 48-ball FBGA package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 21 Bit | ||
| 32 Mbit | ||
| FBGA | ||
| Surface Mount | ||
| Tin-Silver-Copper | ||
| 260 | ||
| 45 mA | ||
| 55 ns | ||
| 2M x 16bit | ||
| 32 Mbit | ||
| Surface Mount | ||
| 48 | ||
| 8, 16 Bit | ||
| 1 | ||
| 2 MWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 48FBGA | ||
| 48 | ||
| 9.5 x 8 x 0.91 mm | ||
| No | ||
| Industrial | ||
| Asynchronous SRAM | ||
| FBGA | ||
| 3.6 V | ||
| 2.2 V | ||
| 3 V | ||
| Asynchronous | ||
| 3.0000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991B2A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Ships
in 1 bus. day