CY62168EV30LL-45BVXI
SRAM, Asynchronous SRAM, 16 Mbit, 2M x 8bit, VFBGA, 48 Pins, 3.6 V
The CY62168EV30 is a high performance CMOS static RAM organized as 2 M words by 8-bits. This device features advanced circuit design to provide an ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling.
- Very high speed: 45 ns
- Wide voltage range: 2.20 V to 3.60 V
- Ultra low standby power
- Typical standby current: 1.5 µA
- Maximum standby current: 12 µA
- Ultra low active power
- Typical active current: 2.2 mA at f = 1 MHz
- Easy memory expansion with CE1/, CE2 and OE/ features
- Automatic power-down when deselected
- CMOS for optimum speed/power
- Offered in Pb-free 48-ball FBGA package. For Pb-free 48-pin TSOP I package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| VFBGA | ||
| Surface Mount | ||
| 2M x 8bit | ||
| 16 Mbit | ||
| 48 | ||
| 85 °C | ||
| -40 °C | ||
| Asynchronous SRAM | ||
| 2.2 V | ||
| 3.6 V | ||
| 3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | 3A991B2A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
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