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CY62167GN30-45BVXI

SRAM Chip Async Single 2.5V/3.3V 16M-Bit 1M x 16 45ns 48-Pin VFBGA Tray

Manufacturer:Infineon
Product Category: Memory, SRAMs
Avnet Manufacturer Part #: CY62167GN30-45BVXI
Secondary Manufacturer Part#: CY62167GN30-45BVXI
  • Legend Information Icon RoHS 10 Compliant
  • Legend Information Icon Tariff Charges

CY62167G is high-performance CMOS, low-power (MoBL) SRAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. To access devices with a single chip enable input, assert the chip enable (CE\) input LOW. To access dual chip enable devices, assert both chip enable inputs – CE1\ as LOW and CE2 as HIGH. To perform data writes, assert the Write Enable (WE\) input LOW, and provide the data and address on the device data pins (I/O0 through I/O15) and address pins (A0 through A19) respectively. The Byte High Enable (BHE\) and Byte Low Enable (BLE\) inputs control byte writes and write data on the corresponding I/O lines to the memory location specified. BHE\ controls I/O8 through I/O15 and BLE\ controls I/O0 through I/O7. To perform data reads, assert the Output Enable (OE\) input and provide the required address on the address lines. You can access read data on the I/O lines (I/O0 through I/O15). To perform byte accesses, assert the required byte enable signal (BHE\ or BLE\) to read either the upper byte or the lower byte of data from the specified address location. All I/Os (I/O0 through I/O15) are placed in a high-impedance state when the device is deselected (CE\ HIGH for a single chip enable device and CE1\ HIGH / CE2 LOW for a dual chip enable device), or the control signals are de-asserted (OE\, BLE\, BHE\). These devices have a unique Byte Power-down feature where, if both the Byte Enables (BHE\ and BLE\) are disabled, the devices seamlessly switch to the standby mode irrespective of the state of the chip enables, thereby saving power. The CY62167G devices are available in a Pb-free 48-pin TSOP I package and 48-ball VFBGA packages.

  • Ultra-low standby current
    • Typical standby current: 5.5 µA
    • Maximum standby current: 16 µA
  • High speed: 45 ns / 55 ns
  • Embedded error-correcting code (ECC) for single-bit errorcorrection
  • Wide voltage: 3 V (typ.)
  • 1.0-V data retention
  • Transistor-transistor logic (TTL) compatible inputs and outputs
  • Error indication (ERR) pin to indicate 1-bit error detection andcorrection
  • 48-pin TSOP I package configurable as 1 M × 16 or 2 M × 8SRAM
  • Available in Pb-free 48-ball VFBGA and 48-pin TSOP Ipackages

Technical Attributes

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Description Value
16 Mbit
Tin-Silver-Copper
260 °C
45 ns
16 Mbit
Surface Mount
MSL 3 - 168 hours
48
16 Bit
16 Bit
1
1 MWords
-40 to 85 °C
85 °C
-40 °C
48VFBGA
48
6 x 8 x 0.79 mm
0
Industrial
VFBGA
2.5, 3.3 V
2.5, 3.3 V

ECCN / UNSPSC / COO

Description Value
Country of Origin: PROJECTED FEE
ECCN: 3A991.B.2.B
HTSN: 8542320041
Schedule B: 8542320040
In Stock :  0
Additional inventory
Factory Lead Time: 2 Weeks
Price for: Each
Quantity:
Min:45  Mult:1  
USD $:
45+
$16.065
90+
$15.84
180+
$15.615
360+
$15.39
720+
$15.165