CY62167G30-45ZXI

CY62167G30-45ZXI is a CY62167G30 high-performance CMOS, low-power (MoBL®) SRAM device with embedded ECC. The byte high enable (BHE) and byte low enable (BLE) inputs control byte writes and write data on the corresponding I/O lines to the memory location specified. BHE controls I/O8 through I/O15 and BLE controls I/O0 through I/O7. To perform data reads, assert the output enable active-low (OE) input and provide the required address on the address lines. User can access read data on the I/O lines (I/O0 through I/O15). To perform byte accesses, assert the required byte enable signal active-low (BHE or BLE) to read either the upper byte or the lower byte of data from the specified address location.

• Ultra-low standby current, typical standby current: 1.5µA
• High speed is 45ns
• Embedded error-correcting code (ECC) for single-bit error correction
• Operating voltage range from 2.2V to 3.6V
• 1.0-V data retention
• Transistor-transistor logic (TTL) compatible inputs and outputs
• Error indication (ERR) pin to indicate 1-bit error detection and correction
• 48-pin TSOP I package
• Industrial ambient temperature range from –40°C to +85°C