CY62167EV30LL-45ZXI
SRAM Chip Async Single 3V 16M-Bit 2M/1M x 8/16-Bit 45ns 48-Pin TSOP-I Tray
The CY62167EV30LL-45ZXI is a 16Mb high performance CMOS static RAM organized as 1M words by 16-bits or 2M words by 8-bits. This device features an advanced circuit design that provides an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99% when addresses are not toggling. Place the device into standby mode when deselected. The input and output pins are placed in a high impedance state when the device is deselected, outputs are disabled, both byte high enable and byte low enable are disabled or a write operation is in progress. To write to the device, take chip enables and write enable input LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins.
- Ultra-low standby power
- Ultra-low active power
- Easy memory expansion with CE1, CE2 and OE
- Automatic power-down when deselected
- CMOS for optimum speed/power
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| TSOP-I | ||
| Surface Mount | ||
| 1M x 16bit | ||
| 16 Mbit | ||
| 48 | ||
| 85 °C | ||
| -40 °C | ||
| Asynchronous SRAM | ||
| 3.6 V | ||
| 2.2 V | ||
| 3 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |