CY62167DV30LL-55ZXI
SRAM, Asynchronous SRAM, 16 Mbit, 1M x 16bit, TSOP, 48 Pins, 2.2 V
The CY62167DV30LL-55ZXI is a 16Mb high-performance CMOS static RAM organized as 1M words by 16-bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected. The input/output pins are placed in a high-impedance state when deselected, outputs are disabled, both byte high enable and byte low enable are disabled or during a write operation. Writing to the device is accomplished by taking chip enables and write enable input LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins. If byte high enable is LOW, then data from I/O pins is written into the location specified on the address pins.
- Ultra-low standby power
- Easy memory expansion with CE1, CE2 and OE
- Automatic power-down when deselected
- CMOS for optimum speed/power
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 20 Bit | ||
| 16 Mbit | ||
| TSOP-I | ||
| Surface Mount | ||
| Matte Tin | ||
| 260 | ||
| 30 mA | ||
| 55 ns | ||
| 1M x 16bit | ||
| 16 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 48 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 1 MWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 48TSOP-I | ||
| 48 | ||
| 12 x 18.4 x 1.05 mm | ||
| No | ||
| Industrial | ||
| Asynchronous SRAM | ||
| TSOP-I | ||
| 3.6 V | ||
| 2.2 V | ||
| 3 V | ||
| Asynchronous | ||
| 3.0000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | RECOVERY FEE |
| ECCN: | 3A991B2A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |