CY62167DV30LL-55BVXIT

CY62167DV30LL-55BVXIT is a high-performance CMOS static RAM organized as 1M words by 16-bits. This device features an advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (active low CE1 HIGH or CE2 LOW or both active low BHE and active low BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (active low CE1 HIGH or CE2 LOW), outputs are disabled (active low OE HIGH), both Byte High Enable and Byte Low Enable are disabled (active low BHE, active low BLE HIGH), or during a Write operation (active low CE1 LOW, CE2 HIGH and active low WE LOW).

• Thin small outline package (TSOP-I) configurable as 1M × 16 or as 2M × 8 SRAM
• Wide voltage range from 2.2V to 3.6V
• Ultra-low standby power
• Easy memory expansion with active low CE1, active low CE2 and active low OE features
• Automatic power-down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed / power
• VCC range from 2.2 to 3.6V, power dissipation is 2mA typ (f = 1MHz)
• Standby ISB2 is 2.5µA typical, VCC for data retention is 1.5V minimum
• Data retention current is 30µA (VCC = 1.5V), operation recovery time is 55ns min
• 48-ball FBGA package, industrial temperature range from -40°C to +85°C