CY62157EV30LL-45BVI

CY62157EV30LL-45BVI is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features an advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (active low CE1 HIGH or CE2 LOW or both active low BHE and active low BLE are HIGH). The input or output pins (I/O0 through I/O15) are placed in a high impedance state when the device is deselected (active low CE1HIGH or CE2 LOW), the outputs are disabled (active low OE HIGH), Byte High Enable and Byte Low Enable are disabled (active low BHE, active low BLE HIGH), or a write operation is active (active low CE1 LOW, CE2 HIGH and WE LOW).

• Thin small outline package (TSOP) I package configurable as 512K × 16 or 1M × 8 static RAM (SRAM)
• Easy memory expansion with active low CE1, CE2, and active low OE features
• Automatic power down when deselected
• Complementary Metal Oxide Semiconductor (CMOS) for optimum speed and power
• VCC range from 2.2 to 3.6V, power dissipation is 1.8mA typ (f = 1MHz), standby, ISB2 is 2µA typ
• Input leakage current range from -4 to +4µA (GND < VI < VCC)
• Output leakage current range from -4 to +4µA (GND < VO < VCC, Output disabled)
• VCC for data retention is 1.5V minimum
• Data retention current is 30µA (VCC = 1.5V), operation recovery time is 55ns min
• 48-ball VFBGA package, industrial temperature range from -40°C to +85°C