CY62157ELL-55ZSXE

CY62157ELL-55ZSXE is a high-performance CMOS static RAM organized as 512K words by 16 bits. This device features an advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power-down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (active low CE1 HIGH or CE2 LOW or both active low BHE and active low BLE are HIGH). To write to the device, take Chip Enable (active low CE1 LOW and CE2 HIGH) and Write Enable (active low WE) inputs LOW. If Byte Low Enable (active low BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A18). If Byte High Enable (active low BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A18).

• Ultra low standby power
• Easy memory expansion with active low CE1, CE2 and active low OE features
• Automatic power down when deselected
• CMOS for optimum speed and power
• VCC range from 4.5 to 5.5V, power dissipation is 1.8mA typ (f = 1MHz), standby, ISB2 is 2µA typ
• Input capacitance is 10pF max (TA = 25°C, f = 1MHz, VCC = VCC(typ))
• Output capacitance is 10pF max (TA = 25°C, f = 1MHz, VCC = VCC(typ))
• Input leakage current range from -4 to +4µA (GND < VI < VCC)
• Output leakage current range from -4 to +4µA (GND < VO < VCC, output disabled)
• 44-pin TSOP Type II package, temperature range from -40°C to +12°C (Automotive-E)