CY62157ELL-55BVXE
SRAM Chip Async Single 5V 8M-Bit 512K x 16 55ns 48-Pin VFBGA
The CY62157E is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.
- Very high speed: 45 ns
- Industrial: -40 °C to +85 °C
- Automotive-E: -40 °C to +125 °C
- Wide voltage range: 4.5 V-5.5 V
- Ultra low standby power
- Typical standby current: 2 µA
- Maximum standby current: 8 µA (Industrial)
- Ultra low active power
- Typical active current: 1.8 mA at f = 1 MHz
- Ultra low standby power
- Easy memory expansion with CE1/, CE2 and OE/ features
- Automatic power down when deselected
- CMOS for optimum speed and power
- Available in Pb-free 44-pin TSOP II and 48-ball VFBGA package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 19 Bit | ||
| 8 Mbit | ||
| Tin-Silver-Copper | ||
| 260 | ||
| 35 mA | ||
| 55 ns | ||
| 8 Mbit | ||
| Surface Mount | ||
| MSL 3 - 168 hours | ||
| 48 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 512 kWords | ||
| -40 to 125 °C | ||
| 125 °C | ||
| -40 °C | ||
| 48VFBGA | ||
| 48 | ||
| 8 x 6 x 0.74 mm | ||
| No | ||
| Automotive | ||
| VFBGA | ||
| 5.5 V | ||
| 4.5 V | ||
| 5 V | ||
| Asynchronous | ||
| 5.0000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | NO RECOVERY FEE |
| ECCN: | 3A991B2A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: