CY62148ESL-55ZAXI

The CY62148ESL is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL in portable applications. The device also has an automatic power-down feature that significantly reduces power consumption. Placing the device in standby mode reduces power consumption by more than 99 percent when deselected. The eight input and output pins are placed in a high impedance state when the device is deselected, the outputs are disabled, or during a write operation. To write to the device, take Chip Enable and Write Enable inputs LOW. Data on the eight I/O pins is then written into the location specified on the address pins. To read from the device, take Chip Enable and Output Enable LOW while forcing Write Enable HIGH. Under these conditions, the contents of the memory location specified by the address pins appear on the I/O pins. The CY62148ESL device is suitable for interfacing with processors that have TTL I/P levels. It is not suitable for processors that require CMOS I/P levels.

• Higher speed up to 55 ns
• Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
• Ultra low standby power
  • Typical standby current: 1 µA
  • Maximum standby current: 7 µA
• Ultra low active power
  • Typical active current: 2 mA at f = 1 MHz
• Easy memory expansion with CE/ and OE/ and features
• Automatic power-down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• Available in Pb-free 32-pin shrunk thin small outline package (STSOP) package