CY62147EV30LL-45B2XI
SRAM Chip Async Single 3V 4M-Bit 256K x 16 45ns 48-Pin VFBGA Tray
The CY62147EV30 is a high performance CMOS static RAM (SRAM) organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.
- Very high speed: 45 ns
- Temperature ranges
- Automotive-A: -40 °C to +85 °C
- Automotive-E: -40 °C to +125 °C
- Wide voltage range: 2.20 V to 3.60 V
- Pin compatible with CY62147DV30
- Ultra low standby power
- Typical standby current: 1 µA
- Maximum standby current: 7 µA (Automotive-A)
- Ultra low active power
- Typical active current: 2 mA (Automotive-A) at f = 1 MHz
- Easy memory expansion with CE/ and OE features
- Automatic power down when deselected
- Complementary metal oxide semiconductor (CMOS) for optimum speed and power
- Available in Pb-free 48-ball very fine ball grid array (VFBGA) (single/dual CE option) and 44-pin thin small outline package (TSOP) II packages
- Byte power-down feature
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| 18 Bit | ||
| 4 Mbit | ||
| Tin-Silver-Copper | ||
| 260 | ||
| 20 mA | ||
| 45 ns | ||
| 4 Mbit | ||
| Surface Mount | ||
| 48 | ||
| 16 Bit | ||
| 16 Bit | ||
| 1 | ||
| 256 kWords | ||
| -40 to 85 °C | ||
| 85 °C | ||
| -40 °C | ||
| 48VFBGA | ||
| 48 | ||
| 8 x 6 x 0.74 mm | ||
| No | ||
| Industrial | ||
| VFBGA | ||
| 3.6 V | ||
| 2.2 V | ||
| 3 V | ||
| Asynchronous | ||
| 3.0000 V |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | PROJECTED FEE |
| ECCN: | 3A991.B.2.A |
| HTSN: | 8542320041 |
| Schedule B: | 8542320040 |
Factory Lead Time: