CY62147EV18LL-55BVXIT

The CY62147EV18 is a high performance CMOS static RAM organized as 256 K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected. The input and output pins are placed in a high impedance state when the device is deselected, the outputs are disabled, both the Byte High Enable and the Byte Low Enable are disabled, or during an active write operation. To write to the device, take Chip Enable and Write Enable inputs LOW. If Byte Low Enable is LOW then data from I/O pins is written into the location specified on the address pins. If Byte High Enable is LOW, then data from I/O pins is written into the location specified on the address pins. To read from the device, take Chip Enable and Output Enable LOW while forcing the Write Enable HIGH. If Byte Low Enable is LOW, then data from the memory location specified by the address pins apears on I/O0 to I/O7. If Byte High Enable is LOW, then data from memory appears on I/O8 to I/O15.

• Very high speed: 55 ns
• Wide voltage range: 1.65 V to 2.25 V
• Pin compatible with CY62147DV18
• Ultra low standby power
  • Typical standby current: 1 ?A
  • Maximum standby current: 7 ?A
• Ultra low active power
  • Typical active current: 2 mA at f = 1 MHz
• Ultra low standby power
• Easy memory expansion with CE and OE features
• Automatic power down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• Available in a Pb-free 48-ball very fine ball grid array (VFBGA) package